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Properties of solution-processed MgInZnO semiconductor thin films and photodetectors fabricated at a low temperature using UV-assisted thermal annealing

Ultraviolet (UV) irradiation-assisted thermal annealing is used for the fabrication of Mg doped InZnO (MIZO) semiconductor thin films and metal-semiconductor-metal (MSM) type photodetectors on alkali-free glasses at a low temperature of 300°C. In this study, the effects of UV irradiation time on the structural features and the optical and electrical properties of sol-gel derived MIZO thin films were investigated, and the photoresponse properties of MIZO photodetectors fabricated using UV-assisted thermal annealing (UV-TA) and conventional thermal annealing (CTA) were compared. The molar ratio of In:Zn was fixed at 3:2, and the Mg content was maintained at 20at% ([Mg]/[In+Zn]) in the precursor solution. After a spin-coating and drying procedure was performed twice, the dried sol-gel films were heated on a hotplate at 300°C and exposed to UV irradiation in ambient air. The UV irradiation time was adjusted to 1, 2, 3, and 4h. All annealed MIZO thin films had a dense microstructure, uniform film thickness, and flat surface and exhibited good optical transmittance (> 86.0%). The mean resistivity decreased with increasing irradiation time, and the samples irradiated for 4h exhibited the lowest mean resistivity of 4.4×102 ?-cm. Current-voltage (I-V) characteristics showed that the MIZO photodetectors operated in the photoconductive mode. Under illumination with UVC light, the MIZO photodetectors exhibited an Ilight-to-Idark ratio of 7.7 × 102 and had a photoresponsivity of 5.0A/W at a bias of 5V.

» Author: Chien-Yie Tsay, Po-Hsien Wu

» Reference: Ceramics International, Volume 43, Issue 15

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This project has received funding from the European Union Seventh Framework Programme (FP7/2007-2013) under grant agreement n° [609203].

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